RD50 - Publications in scientific journals  
(List generated from database on 4-June-2023 - 4:14:29 PM )

# Publications "On behalf of RD50"   Link Paper (*)
1.   "Development of radiation hard sensors for very high luminosity colliders - CERN-RD50 project"; M.Moll; NIMA, 511, 97-105, (2003).   link   pdf  
2.   "Status of defect engineering activity of the RD50 collaboration"; Panja Luukka; NIMA, 530, 152-157, (2004).   link   pdf  
3.   "Material engineering for the development of ultra-radiation hard semiconductor detectors"; M.Bruzzi; NIMA, 518, 336-337, (2004).   link   pdf  
4.   "Radiation-hard semiconductor detectors for SuperLHC"; M. Bruzzi et al. (RD50 Collaboration); NIMA, 541, 189-201, (2005).   link    
5.   "Semiconductor Materials and Detectors for Future Very High Luminosity Colliders"; Andrea Candelori; IEEE_TNS, 52, 2554-2561, (2005).   link   pdf  
6.   "Recent advancements in the development of radiation hard semiconductor detectors for S-LHC"; F.Fretwurst et al. (RD50 Collaboration); NIMA, 552, 7-19, (2005).   link    
7.   "Development of radiation tolerant semiconductor detectors for the Super-LHC"; M.Moll et al. (RD50 Collaboration); NIMA, 546, 99-107, (2005).   link    
8.   "Radiation-hard detectors for very high luminosity colliders"; Andrea Candelori; NIMA, 560, 103-107, (2006).   link    
9.   "Radiation tolerant semiconductor sensors for tracking detectors"; Michael Moll; NIMA, 565, 202-211, (2006).   link    
10.   "New materials for radiation hard semiconductor dectectors"; P.J. Sellin and J. Vaitkus; NIMA, 557, 479-489, (2006).   link    
11.   "Recent progress of CERN RD50 Collaboration"; P.Luukka; Trans. Nonferrous Met. Soc. China, 16, s133-s136, (2006).   link    
12.   "Recent results from CERN RD50 collaboration"; G.Kramberger; NIMA, 583, 49-57, (2007).   link    
13.   "Recent developments of the CERN RD50 collaboration"; David Menichelli; NIMA, 596, 48-52, (2008).   link    
14.   "Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC"; Gianluigi Casse; NIMA, 598, 54-60, (2009).   link    
15.   "Silicon detectors for the SLHC—An overview of recent RD50 results"; Alexander Dierlamm; NIMA, 624, 396-400, (2010).   link    
16.   "Recent advances in the development of semiconductor detectors for very high luminosity colliders"; Frank Hartmann; NIMA, 617, 543-545, (2010).   link    
17.   "Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities"; Christopher Betancourt, Vitaliy Fadeyev, Hartmut F.-W. Sadrozinski, John Wright; SPIE, 7817, 78170-J, (2010).   link    
18.   "Silicon detectors for the sLHC"; RD50 (Ulrich Parzefall); NIMA, 658, 11-16, (2011).   link    
19.   "Silicon Detectors for the sLHC"; J.Metcalfe; Nucl.Phys.B.(Proc), 215, 151-153, (2011).   link    
20.   "Silicon detectors for the super LHC"; Sally Seidel; NIMA, 628, 272-275, (2011).   link    
21.   "Radiation-hard silicon for HL-LHC trackers"; U.Soldevila; Jinst, 6, C-12035, (2011).   link    
22.   "Silicon sensors for HL-LHC tracking detectors"; Igor Mandic; NIMA, , -, (2013).   link    

(*) These links are protected in order to not violate copyright rules.
# Publications "In the framework of RD50"   Link Paper (*)
1.   "Performance of irradiated bulk SiC detectors"; W.Cunningham, J.Melone, M.Horn, V.Kazukauskas, P.Roy, F.Doherty, M.Glaser, J.Vaitkus, M.Rahman; NIMA, 509, 127-131, (2003).     pdf  
2.   "Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion""; I.Pintilie, E.Fretwurst, G.Lindstroem, J.Stahl; APL, 82, 2169-2171, (2003).     pdf  
3.   "Second-order generation of point defects in highly irradiated float zone silicon––annealing studies"; I. Pintilie, E. Fretwurst, G. Kramberger, G. Lindstroem, Z. Li and J. Stahl; PhysicaB, 340-342, 578-582, (2003).     pdf  
4.   "Superior radiation tolerance of thin epitaxial silicon detectors"; G.Kramberger, D.Contarato, E.Fretwurst, F.Hoenninger, G.Lindstroem, I.Pintilie, R.Roeder, A.Schramm, J.Stahl; NIMA, 515, 665-670, (2003).     pdf  
5.   "Radiation hardness of silicon––a challenge for defect engineering"; J. Stahl, E. Fretwurst, G. Lindstroem and I. Pintilie; PhysicaB, 340-342, 705-709, (2003).     pdf  
6.   "Radiation hardness of different silicon materials after high-energy electron irradiation"; S. Dittongo, , a, b, L. Bosisioa, b, M. Ciacchia, D. Contaratoc, G. D'Auriad, E. Fretwurstc and G. Lindströmc; NIMA, 530, 110-116, (2004).   link    
7.   "Fabrication of PIN diode detectors on thinned silicon wafers"; Sabina Ronchin, , a, Maurizio Boscardina, Gian-Franco Dalla Bettab, Paolo Gregoria, Vittorio Guarnieria, Claudio Piemontea and Nicola Zorzia; NIMA, 530, 134-138, (2004).   link   pdf  
8.   "Lithium Ion Irradiation Effects on Epitaxial Silicon Detectors"; Candelori, A.; Schramm, A.; Bisello, D.; Contarato, D.; Fretwurst, E.; Lindstrom, G.; Rando, R.; Wyss, J.; IEEE_TNS, 51, 1766-1772, (2004).     pdf  
9.   "Lithium Ion Irradiation of Standard and Oxygenated Silicon Diodes"; A. Candelori, D. Bisello, G.-F. Dalla Betta, P. Giubilato, A. Kaminski, A. Litovchenko, M. Lozano, J. R. Petrie, R. Rando, M. Ullan, J. Wyss; IEEE_TNS, 51, 2865-2871, (2004).     pdf  
10.   "Measurement of trapping time constants in proton-irradiated silicon pad detectors"; O. Krasel, C. Gößling, R. Klingenberg, S. Rajek, R. Wunstorf; IEEE_TNS, 51, 3055-3062, (2004).   link    
11.   "First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon"; G. Casse, P. P. Allport, S. Martí i Garcia, M. Lozano, P. R. Turner; NIMA, 518, 340-342, (2004).     pdf  
12.   "Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection"; V. Cindro, I. Mandi, G. Kramberger, M. Miku and M. Zavrtanik; NIMA, 518, 343-345, (2004).     pdf  
13.   "Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation"; G. Casse, P.P. Allport, S. Martí i Garcia, M. Lozano and P.R. Turner; NIMA, 535, 362-365, (2004).   link    
14.   "Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias"; I. Mandic, V. Cindro, G. Kramberger, M. Mikuž and M. Zavrtanik; NIMA, 533, 442-453, (2004).   link   pdf  
15.   "A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique"; Alison G. Bates and Michael Moll; NIMA, 555, 113-124, (2005).   link    
16.   "Annealing Studies of magnetic Czochralski silicon radiation detectors"; G. Pellegrini, M. Ullán, J.M. Rafí, M. Lozano, C. Fleta and F. Campabadal; NIMA, 552, 27-33, (2005).   link    
17.   "Characterization of magnetic Czochralski silicon radiation detectors"; G. Pellegrini, J.M. Rafí, M. Ullán, M. Lozano, C. Fleta and F. Campabadal; NIMA, 548, 355-363, (2005).   link    
18.   "Prediction of Charge Collection Efficiency in Hadron-Irradiated Pad and Pixel Silicon Detectors"; R. Klingenberg, O. Krasel, D. Dobos, M. Maß, C. Gößling, R. Wunstorf; NIMA, 568, 34-40, (2006).   link    
19.   "Technology development of p-type microstrip detectors with radiation hard p-spray isolation"; G. Pellegrini, C. Fleta, F. Campabadal, S. Díez, M. Lozano, J.M. Rafí and M. Ullán; NIMA, 566, 360-365, (2006).   link    
20.   "First double-sided 3-D detectors fabricated at CNM-IMB"; G. Pellegrini, M. Lozano, M. Ullán, R. Bates, C. Fleta and D. Pennicard; NIMA, 592, 38-43, (2008).   link    

(*) These links are protected in order to not violate copyright rules.
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